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| Semiconductor SB5311-H / SB5311-H(B) High Brightness LED Lamp Features * Colorless transparency lens type * 5mm( T-13/4) all plastic mold type * High luminosity Outline Dimensions STRAIGHT TYPE 5.00.2 unit : STOPPER TYPE 5.00.2 mm 8.60.2 0.80.2 0.80.2 8.60.2 0.5 23.0 MIN 0.5 23.0 MIN 1.0MIN 2.54NOM 2.54NOM 1.0MIN 1 2 5.80.2 1 2 5.80.2 PIN Connections 1.Anode 2.Cathode KLB-0009-001 1 SB5311-H / SB5311-H(B) Absolute maximum ratings Characteristic Power Dissipation Forward Current * Peak Forward Current Reverse Voltage Operating Temperature Storage Temperature 2 1 Symbol PD IF IFP VR Topr Tstg Ratings 85 20 50 4 -2585 -30100 Unit mW mA mA V 260 for 5 seconds * Soldering Temperature Tsol *1.Duty ratio = 1/16, Pulse width = 0.1ms *2.Keep the distance more than 2.0mm from PCB to the bottom of LED package Recommend document -. LED is very sensitive to ESD. Electrical Characteristics Characteristic Forward Voltage Luminous Intensity Peak Wavelength Spectrum Bandwidth Reverse Current Symbol VF IV Test Condition IF= 20mA IF= 20mA IF= 20mA IF= 20mA VR=4V IF= 20mA Min. 200 - Typ. 3.7 400 468 26 11 Max. 4.2 40 - Unit V mcd nm nm uA deg P IR 1/2 * Half angle 3 *3. 1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity KLB-0009-001 2 SB5311-H / SB5311-H(B) Characteristic Diagrams Fig. 1 IF - VF Fig. 2 IV - IF Luminous Intensity Iv [mcd] Forward Current IF [mA] Forward Voltage VF [V] Forward Current IF [mA] Fig. 3 IF - Ta Fig.4 Spectrum Distribution Current IF [mA] Forward Relative Intensity [%] Ambient Temperature Ta [] Wavelength [nm] Fig. 5 Radiation Diagram Relative Luminous Intensity Iv [%] KLB-0009-001 3 1. ESD(Electro Static Discharge) : Chip Al2o3 (Sapphire: ) Chip Damage VF Down 2. ESD 2-1. ESD (Electro Static Discharge) : (+) (-) ( , , , ) (-) (+) (+) (-) . : , , , , , : , , , , : , . 2-2. -. . 80% . (10%~20%) (65%~90%) Table 6[KV] 0.1[KV] 7[KV] 0.6[KV] 20[KV] 1.2[KV] -. -. : Wrist Strap ( ), Heel Grounder, , , , -. Conveyer Table : Conductive Floor Mat ESD . KLB-0009-001 4 |
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